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FJN3314RTA

Manufacturer:

On Semiconductor

Mfr.Part #:

FJN3314RTA

Datasheet:
Description:

BJTs TO-92-3 Through Hole NPN 300 mW Collector Base Voltage (VCBO):50 V Collector Emitter Voltage (VCEO):50 V Emitter Base Voltage (VEBO):10 V

ParameterValue
Voltage Rating (DC)50 V
Length5.2 mm
Width4.19 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height5.33 mm
PackagingAmmo Pack
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
PolarityNPN
Weight0.24 g
Current Rating100 mA
Lifecycle StatusEOL (Last Updated: 5 months ago)
Max Power Dissipation300 mW
Power Dissipation300 mW
Max Collector Current100 mA
Collector Emitter Breakdown Voltage50 V
Transition Frequency250 MHz
Continuous Collector Current100 mA
Element ConfigurationSingle
Collector Emitter Voltage (VCEO)50 V
Max Breakdown Voltage50 V
Collector Base Voltage (VCBO)50 V
Collector Emitter Saturation Voltage300 mV
Emitter Base Voltage (VEBO)10 V
hFE Min68
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 months ago)
Max Cutoff Collector Current100 mA
Transistor TypeNPN

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